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BU9897GUL-W (128Kbit)
Datasheet
● Low voltage malfunction prevention function
LVCC circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ. =1.2V) or below, it prevent data rewrite.
● V CC noise countermeasures
○ Bypass capacitor
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1μF) between IC Vcc and GND. At that moment, attach it as close to IC as
possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
● Notes for use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, LSI
may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear
exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is lower than that of
GND terminal.
(5) Terminal design
In consideration of permissible loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
20/22
TSZ02201-0R2R0G100500-1-2
4.SEP.2012 Rev.001
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